Manufacturer: Leshan Radio Company
Key Specifications
- Package: SOT-23
- Type: PNP BJT
- Collector-Emitter Voltage (VCEO): -40V
- Collector Current (IC): -200mA
- DC Current Gain (hFE): 100-300 (typical)
- Transition Frequency (fT): 250MHz (typical)
- Operating Temperature: -55°C to +150°C
The LMBT3906N3T5G from Leshan Radio Company is a PNP bipolar junction transistor housed in a compact SOT-23 package. It is designed for general-purpose switching and amplifier circuits where low power and small footprint are essential.
Key Features
- PNP polarity for complementary circuit designs
- Collector-emitter voltage (VCEO) of -40V (to be verified for exact limits)
- Collector current rating of -200mA (typical)
- High DC current gain (hFE) typically ranging from 100 to 300
- Transition frequency (fT) around 250MHz (typical)
- Operating temperature range from -55°C to +150°C
- Compact SOT-23 package suitable for space-constrained PCBs
Applications
- Signal amplification in audio and sensor interfaces
- Low-power switching circuits
- Driver stages in consumer electronics
- Complementary pairs with NPN transistors (e.g., MMBT3904)
Selection Guidance
When selecting the LMBT3906N3T5G, verify the absolute maximum ratings and thermal characteristics against your application requirements. The SOT-23 package offers a balance between thermal performance and board area. For high-frequency or high-current applications, consult the datasheet for detailed characteristics. Always confirm the exact electrical specifications with the manufacturer's official documentation before finalizing your design.
