Manufacturer: Infineon Technologies

Key Specifications

• Package: TDSON-8
• Polarity: N-Channel
• VDS: 100V
• ID (continuous): 13A (at 25°C, limited by package) / 71A (chip limit)
• RDS(on): To be verified
• Operating Temperature: -55 to 150°C (junction)
• Technology: OptiMOS™

The ISC0805NLSATMA1 is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. Housed in a compact TDSON-8 package, this device leverages Infineon's advanced OptiMOS™ technology to deliver low conduction and switching losses, making it suitable for space-constrained designs.

Key Features

• Drain-source voltage (VDS): 100V
• Continuous drain current: 13A (package-limited at 25°C) / 71A (silicon-limited)
• Low on-resistance (RDS(on)): to be verified from datasheet
• Fast switching performance for reduced power dissipation
• RoHS compliant and halogen-free
• Operating junction temperature range: -55°C to 150°C

Applications

• DC-DC converters
• Secondary side synchronous rectification
• Motor control
• Power supply units (PSU)
• Battery management systems

Selection Guidance

When selecting this MOSFET, designers should verify the thermal performance under their specific operating conditions, as the package-limited current (13A) is lower than the silicon capability (71A). Proper PCB layout and heatsinking are essential to maintain junction temperature within limits. For detailed electrical characteristics, refer to the official Infineon datasheet.