Manufacturer: Infineon Technologies

Key Specifications

• Package: TO-220AB
• Polarity: N-Channel
• VDS: 100V
• ID: 120A
• RDS(on): To be verified
• Technology: To be verified
• Operating Temperature: To be verified

The IRFB4110PBF is an N-channel power MOSFET from Infineon Technologies, housed in a TO-220AB package. It is designed for high-current switching and power management applications, offering a drain-source voltage rating of 100V and a continuous drain current of 120A. This device is suitable for a range of industrial and consumer power systems.

Key Features

• N-channel enhancement mode MOSFET
• Drain-source voltage (VDS): 100V
• Continuous drain current (ID): 120A
• Industry-standard TO-220AB package for easy mounting and heat dissipation
• Optimized for low conduction losses (RDS(on) to be verified)
• Compatible with standard gate drive circuits (gate charge to be verified)

Applications

• DC-DC converters
• Motor control and drives
• Power supply units
• Battery management systems
• High-current load switching

Selection Guidance

When selecting the IRFB4110PBF, ensure that the operating voltage and current do not exceed the absolute maximum ratings. Consider thermal management, as the TO-220AB package requires appropriate heatsinking for high-current operation. For detailed specifications, including RDS(on), gate charge, and thermal characteristics, refer to the official datasheet.