Manufacturer: Infineon Technologies

Key Specifications

• Package: TO-220
• Polarity: N-Channel
• VDS: 55V
• ID: 80A
• RDS(on): 7.0 mΩ (max)
• Technology: OptiMOS
• Operating Temperature: -55 to 175°C
• Mounting: Through Hole

Product Overview

The IPP80N06S2-07 from Infineon Technologies is an N-channel power MOSFET based on the advanced OptiMOS technology. It is designed for high-current switching applications where efficiency and thermal performance are critical. The device is housed in a TO-220 package, suitable for through-hole mounting and easy PCB integration.

Key Features

• Drain-source voltage (VDS): 55V
• Continuous drain current (ID): 80A at 25°C (to be verified for higher temperature ratings)
• Low on-state resistance (RDS(on)): 7.0 mΩ maximum
• Fast switching performance due to OptiMOS technology
• Wide operating temperature range: -55°C to 175°C
• RoHS compliant and lead-free

Applications

• DC-DC converters
• Motor control and drives
• Power supply units (SMPS)
• Battery management systems
• Automotive applications (if qualified, to be verified)

Selection Guidance

When selecting this MOSFET, consider the voltage and current ratings relative to your application's peak and continuous loads. The low RDS(on) minimizes conduction losses, but ensure adequate heat sinking for high-current operation. For detailed thermal and switching characteristics, refer to the official datasheet.