Manufacturer: Infineon Technologies

Key Specifications

• Package: TO-220
• Polarity: N-Channel
• VDS: 120V
• RDS(on): 5.0 mΩ (typ)
• ID: 100A
• Technology: OptiMOS
• Mounting: Through Hole

The IPP100N12S3-05 from Infineon Technologies is a robust N-channel power MOSFET built on the advanced OptiMOS technology platform. It is designed to deliver high efficiency and reliable performance in a wide range of power conversion and switching applications. The device is housed in a standard TO-220 package, which offers excellent thermal performance and ease of mounting for through-hole PCB designs.

Key Features

• Drain-source voltage (VDS): 120V
• Continuous drain current (ID): 100A (at Tc=25°C, to be verified)
• Low on-state resistance (RDS(on)): 5.0 mΩ typical, ensuring reduced conduction losses
• OptiMOS technology for fast switching and improved efficiency
• TO-220 package with low thermal resistance
• RoHS compliant and lead-free (to be verified)

Applications

• Switch mode power supplies (SMPS)
• DC-DC converters
• Motor control and drives
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC) circuits
• High-current load switching

Selection Guidance

When selecting this MOSFET for your design, consider the operating voltage, current, and switching frequency requirements. The IPP100N12S3-05 is suitable for applications where low conduction losses and high current capability are critical. Always verify the thermal performance under your specific load conditions and ensure proper heat sinking is provided. For detailed specifications, refer to the official Infineon datasheet.