Manufacturer: Infineon Technologies

Key Specifications

• Package: TO-220-3
• Polarity: N-Channel
• VDS: 120V
• ID: 100A
• RDS(on): To be verified
• Technology: OptiMOS
• Operating Temperature: To be verified
• Mounting: Through Hole

The IPP048N12N3GXKSA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS family. It is designed for high-current switching and power conversion applications, offering a drain-source voltage rating of 120V and a continuous drain current of 100A. The device is housed in a TO-220-3 through-hole package, which provides good thermal performance and ease of mounting in industrial and automotive power stages.

Key Features

• N-channel enhancement mode MOSFET
• Drain-source voltage (VDS): 120V
• Continuous drain current (ID): 100A (at specified temperature, refer to datasheet)
• Low on-resistance (RDS(on)): to be verified from datasheet
• OptiMOS technology for improved switching and conduction performance
• TO-220-3 package for efficient heat dissipation
• RoHS compliant (verify latest compliance status)

Applications

• Switch mode power supplies (SMPS)
• DC-DC converters
• Motor control and drives
• Uninterruptible power supplies (UPS)
• Battery management and protection circuits
• Automotive power applications (if qualified)

Selection Guidance

When selecting this MOSFET, ensure that the voltage and current ratings meet your circuit requirements. The 120V VDS and 100A ID make it suitable for high-power designs, but thermal management and gate drive conditions must be considered. Refer to the official datasheet for detailed RDS(on), gate charge, and thermal resistance values to optimize performance. For design support, consult Infineon's application notes and simulation tools.