Manufacturer: Infineon Technologies

Key Specifications

• Package: 4VSON
• VDS: 600V
• ID: 17A
• RDS(on): 125mΩ (typ)
• Technology: CoolMOS C7
• Operating Temperature: -40 to 150°C
• Mounting: SMD

The IPL60R125C7AUMA1 is an N-channel power MOSFET from Infineon's CoolMOS C7 family, designed for high-voltage power conversion applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 17A, housed in a compact 4VSON package suitable for surface-mount assembly.

Key Features

• 600V breakdown voltage (VDS) for robust high-voltage operation
• Low on-state resistance (RDS(on)) of 125mΩ typical, reducing conduction losses
• CoolMOS C7 technology enables fast switching with reduced gate charge
• 4VSON package offers small footprint and low parasitic inductance
• Wide operating temperature range from -40°C to 150°C
• RoHS compliant and lead-free

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Server and telecom power systems
• Solar inverters and uninterruptible power supplies (UPS)
• EV charging infrastructure

Selection Guidance

This device is suitable for designers seeking a balance between efficiency and thermal performance in 600V-class applications. The low RDS(on) and fast switching characteristics help minimize losses, while the 4VSON package supports compact PCB layouts. For detailed thermal and switching performance data, refer to the official datasheet. Ensure adequate heat sinking and gate drive design based on your specific operating conditions.