Manufacturer: Samsung Electro-Mechanics

Key Specifications

• Package: FBGA (to be verified)
• Core: DDR4
• Memory: 8Gb (512M x16)
• Interface: x16
• Voltage: 1.2V/1.35V (to be verified)
• Temperature: 0°C to 85°C (to be verified)
• Speed: to be verified

The K4A8G165WC-BCTD is a DDR4 SDRAM device from Samsung Electro-Mechanics, designed to meet the memory requirements of modern computing and embedded systems. This product offers a storage capacity of 8 gigabits (Gb) organized as 512M words by 16 bits, providing a high-density solution for applications that demand substantial memory bandwidth and capacity.

Key Features

• DDR4 architecture for improved speed and power efficiency compared to previous generations.
• 8Gb density in a x16 configuration, suitable for systems requiring wide data paths.
• Package type: FBGA (fine-pitch ball grid array), enabling compact board design (exact package details to be verified).
• Operating voltage: nominal 1.2V (compatible with 1.35V for some configurations, to be verified).
• Temperature range: commercial grade (0°C to 85°C, to be verified).
• Interface: x16 data bus, supporting standard DDR4 signaling.

Applications

This memory component is suitable for use in laptops, desktops, servers, networking equipment, and industrial computing systems where DDR4 memory is required. Its x16 organization makes it ideal for memory modules or embedded designs that need a compact, high-capacity memory solution.

Selection Guidance

When selecting this part, designers should verify the exact speed grade (e.g., DDR4-2400 or higher) and timing parameters from the official datasheet, as these are not fully specified in this summary. Additionally, confirm the operating voltage and temperature range to ensure compatibility with the target application environment.