Manufacturer: Samsung Electro-Mechanics

Key Specifications

• Package: 96-ball FBGA
• Core: DDR3 SDRAM
• Memory: 4Gb (256M x 16)
• Interface: x16
• Voltage: 1.35V/1.5V
• Temperature: Commercial (0°C to 95°C Tcase)
• Speed Grade: To be verified
• Organization: 256M x 16

The Samsung K4B4G1646E-BCNB is a high-performance DDR3 SDRAM device designed for a wide range of computing and embedded applications. This product provides 4 gigabits of memory density in a 256M x 16 organization, enabling efficient data processing in systems requiring moderate memory capacity with a 16-bit data bus.

Key Features

• DDR3 SDRAM core with double-data-rate architecture for high-speed data transfer
• 4Gb density, organized as 256M x 16, suitable for memory modules and small-footprint designs
• Dual voltage operation: 1.35V (low power) and 1.5V (standard), allowing flexible power management
• 96-ball FBGA package, optimized for space-constrained PCB layouts
• Commercial temperature range (0°C to 95°C Tcase) for typical consumer and industrial environments
• On-die termination (ODT) and programmable CAS latency to support signal integrity and system tuning
• Auto refresh and self refresh modes for power saving

Applications

• Memory modules (e.g., SO-DIMM, UDIMM) for laptops and desktops
• Embedded systems, including networking equipment and industrial PCs
• Consumer electronics requiring reliable DDR3 memory

Selection Guidance

When selecting this component, verify the speed grade (e.g., -BC indicates a specific speed bin) and ensure compatibility with your memory controller. The dual voltage feature allows operation at 1.35V for reduced power consumption, but confirm that your system supports this mode. For detailed timing parameters and AC/DC characteristics, refer to the official Samsung datasheet, as some specifications (e.g., maximum clock frequency) are to be verified based on the specific speed grade.