Manufacturer: Micron
Key Specifications
- Package: 96-ball FBGA
- Core: DDR4 SDRAM
- Memory: 8Gb (512M x 16)
- Interface: SSTL-12
- Voltage: VDD=1.2V
- Temperature: 0°C to +95°C (Tcase)
- Speed Grade: -062E (to be verified)
The Micron MT40A512M16TB-062E:R is a high-performance DDR4 SDRAM component designed for a wide range of computing and embedded applications. This device provides 8 gigabits of memory density in a 512M x 16 organization, enabling efficient data throughput in space-constrained designs.
Key Features
- DDR4 SDRAM architecture with data rates up to 3200 MT/s (speed grade -062E, to be verified)
- 8Gb density, organized as 512M x 16
- 1.2V power supply (VDD) with on-die termination (ODT) options
- 96-ball FBGA package for compact PCB layout
- Operating temperature range: 0°C to +95°C (Tcase)
- Burst lengths: 8 and 4 (with burst chop)
- Programmable CAS latency and additive latency
Applications
- Servers and cloud computing platforms
- Networking equipment (routers, switches)
- Embedded systems and industrial PCs
- High-performance computing (HPC) modules
Selection Guidance
When selecting this DDR4 device, verify the specific speed grade and timing parameters against your system requirements. The -062E suffix indicates a particular speed/timing option; consult the official Micron datasheet for exact AC/DC characteristics. Ensure compatibility with your memory controller and PCB layout for signal integrity.