Manufacturer: Infineon Technologies

Key Specifications

• Package: TO-262-3
• Polarity: N-Channel
• VDS: 650V
• ID: 10.6A
• RDS(on): 0.38Ω (typical)
• Technology: CoolMOS C6
• Operating Temperature: -55 to +150°C
• Mounting: Through Hole

The IPI65R380C6XKSA1 is an N-channel power MOSFET from Infineon Technologies, part of the CoolMOS C6 family. It is designed for high-voltage power conversion applications requiring high efficiency and reliability. The device features a 650V drain-source breakdown voltage and a continuous drain current of 10.6A at 25°C, with a typical on-state resistance of 0.38Ω. The TO-262-3 package (also known as I2PAK) offers a robust through-hole mounting solution for industrial power designs.

Key Features

• 650V breakdown voltage suitable for 400V and 600V bus systems
• Low gate charge and fast switching characteristics for reduced switching losses
• Enhanced body diode ruggedness for improved reliability in hard-switching topologies
• Wide operating temperature range from -55°C to +150°C
• RoHS compliant and lead-free plating

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Server and telecom power systems
• Industrial power converters
• LED lighting drivers

Selection Guidance

When selecting this MOSFET, consider the thermal requirements of your application. The TO-262-3 package provides a low thermal resistance path to the heatsink. Ensure adequate gate drive voltage (typically 10V to 15V) to achieve the specified low on-resistance. For detailed thermal and switching performance data, refer to the official datasheet. Specific values such as gate charge and output capacitance are to be verified from the manufacturer's documentation.