Manufacturer: Nanya Technology
Key Specifications
- Package: 96-ball FBGA
- Core: DDR3L SDRAM
- Memory Size: 4Gb (256M x16)
- Interface: SSTL_15
- Voltage: 1.35V (1.283V-1.45V)
- Temperature: 0°C to +95°C (Tc)
- Speed Grade: to be verified
- RoHS: Compliant
The Nanya Technology NT5CC256M16ER-EK is a high-density DDR3L SDRAM component designed to meet the memory requirements of modern computing and embedded applications. With a density of 4 gigabits and an x16 data bus organization, this device provides a balanced combination of capacity and bandwidth for systems requiring efficient memory performance.
Key Features
- DDR3L SDRAM architecture with 8n-bit prefetch and burst lengths of 8 and 4 (via burst chop)
- Operating voltage of 1.35V (range 1.283V to 1.45V), reducing power consumption compared to standard DDR3
- 96-ball FBGA package for space-constrained PCB designs
- Data transfer rates up to to be verified (speed grade not specified in public datasheet)
- On-die termination (ODT) and programmable CAS latency for signal integrity
- Auto refresh and self refresh modes for low-power standby
- Industrial temperature range (0°C to +95°C case temperature) for reliable operation in varied environments
- RoHS-compliant lead-free packaging
Applications
- Embedded systems (e.g., networking, industrial computing)
- Consumer electronics (e.g., set-top boxes, smart TVs)
- Computing peripherals (e.g., SSDs, network adapters)
- Automotive infotainment (if qualified, verify with manufacturer)
Selection Guidance
When integrating the NT5CC256M16ER-EK, designers should verify the speed grade (e.g., -EK suffix indicates specific timing parameters) and ensure compatibility with the memory controller. The 1.35V operation is ideal for power-sensitive designs, but the system must support DDR3L signaling levels. For detailed timing and AC/DC characteristics, refer to the official Nanya datasheet.
