Manufacturer: Nexperia

Key Specifications

• Package: SOT-23
• Transistor Type: NPN
• VCEO: 45V
• IC: 100mA
• DC Current Gain (hFE): 200-450 (at IC=2mA)
• Transition Frequency (fT): 100MHz (typical)
• Operating Temperature: -55°C to +150°C

The BC847B from Nexperia is a general-purpose NPN bipolar junction transistor (BJT) housed in a compact SOT-23 surface-mount package. It is designed for low-power switching and amplification applications, offering a collector-emitter voltage of 45V and a continuous collector current of 100mA.

Key Features

• NPN silicon planar epitaxial transistor
• Collector-emitter voltage (VCEO): 45V
• Collector current (IC): 100mA
• DC current gain (hFE) range: 200-450 at IC=2mA (BC847B grade)
• Transition frequency (fT): typically 100MHz
• Low saturation voltage suitable for switching
• Operating junction temperature range: -55°C to +150°C
• Small SOT-23 package (2.9mm x 1.3mm) for space-constrained designs

Applications

• General-purpose switching circuits
• Signal amplification in audio and sensor interfaces
• Driver stages for LEDs or relays
• Logic level shifting
• Battery-powered portable electronics

Selection Guidance

When selecting the BC847B, ensure that the operating voltage and current do not exceed the absolute maximum ratings (45V and 100mA). The hFE grouping (B) provides a gain range of 200-450, which is suitable for applications requiring moderate gain consistency. For higher current or voltage requirements, consider other transistor families from Nexperia. Always refer to the official datasheet for complete specifications and thermal characteristics.