Manufacturer: Vishay

Key Specifications

• Package: PowerPAK 1212-8
• Polarity: N-Channel
• VDS: 30 V
• RDS(on): To be verified
• ID: To be verified
• VGS(th): To be verified
• Operating Temperature: -55 to 150 °C
• Technology: TrenchFET

The SIS468DN-T1-GE3 from Vishay is an N-Channel MOSFET designed for power management and load switching applications. Housed in the compact PowerPAK 1212-8 package, this device offers a balance of thermal performance and board space efficiency, making it suitable for space-constrained designs.

Key Features

• 30 V drain-source voltage rating
• N-Channel enhancement mode
• PowerPAK 1212-8 surface-mount package
• TrenchFET technology for low on-resistance (specific value to be verified)
• Wide operating temperature range from -55 °C to 150 °C
• RoHS-compliant and halogen-free (per Vishay's green policy)

Applications

• DC/DC converters
• Load switches
• Power supply OR-ing
• Battery protection circuits
• Motor control

Selection Guidance

When integrating the SIS468DN-T1-GE3, designers should verify the exact electrical characteristics, including on-resistance and current rating, from the official datasheet. The device is suitable for low-voltage (<30 V) applications where high switching efficiency and small footprint are required. Thermal management should be considered based on the actual power dissipation in the target circuit.