Manufacturer: Infineon Technologies

Key Specifications

• Package: SOT-23-3
• Configuration: Single N-Channel
• Drain-Source Voltage (Vds): 50V
• Continuous Drain Current (Id): 220mA
• Rds(on): To be verified
• Gate-Source Voltage (Vgs): To be verified
• Operating Temperature: To be verified
• Technology: To be verified

The BSS138 from Infineon Technologies is a single N-Channel MOSFET housed in a compact SOT-23-3 package. Designed for low-power switching and level-shifting applications, this device offers a drain-source voltage rating of 50V and a continuous drain current of 220mA, making it suitable for a wide range of general-purpose circuits.

Key Features

• N-Channel enhancement mode MOSFET
• Drain-Source voltage (Vds): 50V
• Continuous drain current (Id): 220mA
• Low threshold voltage for logic-level gate drive (to be verified)
• Low on-state resistance (Rds(on)): to be verified
• Compact SOT-23-3 package for space-constrained designs
• RoHS compliant and lead-free (to be verified)

Applications

• DC-DC converters and power management
• Load switching in portable electronics
• Level shifting in mixed-voltage systems
• Signal switching and analog multiplexing
• Battery-powered devices

Selection Guidance

When selecting the BSS138, ensure that the operating voltage and current do not exceed the absolute maximum ratings. For high-frequency switching applications, consider the gate charge and switching characteristics (to be verified). The SOT-23-3 package is ideal for compact PCB layouts, but thermal performance should be evaluated based on the actual power dissipation. For detailed specifications, refer to the official datasheet.