Manufacturer: Infineon Technologies

Key Specifications

• Package: SuperSO8 (PG-TDSON-8)
• Configuration: Single N-Channel
• VDS: 60 V
• RDS(on) typ: 1.4 mΩ (10V, to be verified)
• ID: 100 A (to be verified)
• Technology: OptiMOS
• Operating Temperature: -55 to 150 °C (to be verified)

The BSC014N06NS from Infineon Technologies is an N-channel power MOSFET based on the OptiMOS technology platform. It is housed in a compact SuperSO8 (PG-TDSON-8) package, designed for high-current and high-efficiency applications. The device features a drain-source voltage rating of 60 V, making it suitable for a wide range of power conversion circuits.

Key Features

• Low on-resistance (RDS(on)) to minimize conduction losses
• Optimized for high switching frequency operation
• SuperSO8 package with excellent thermal performance
• RoHS compliant and halogen-free
• Qualified according to JEDEC standards

Applications

• Switched-mode power supplies (SMPS)
• DC-DC converters
• Motor drives
• Power tools and battery management
• Server and telecom power systems

Selection Guidance

When selecting this MOSFET, consider the required drain current, switching frequency, and thermal conditions. The BSC014N06NS is suitable for designs where low conduction and switching losses are critical. For detailed specifications, refer to the official datasheet. Some parameters, such as maximum continuous drain current and exact RDS(on) values, are to be verified based on the latest documentation.