Manufacturer: Vishay

Key Specifications

• Package: TSOP-66
• Core: DDR3
• Memory Size: 1Gb (128M x 8)
• Interface: Parallel
• Voltage: 3.3V (VDD)
• Temperature: 0°C to 85°C (operating)
• Speed Grade: To be verified

The TSOP38G36DD1 from Vishay is a high-performance DDR3 SDRAM component designed for reliable operation in a wide range of electronic systems. This memory device offers a storage capacity of 1 gigabit (Gb), organized as 128M words by 8 bits, making it suitable for applications requiring moderate memory density with a narrow data bus.

Key Features

• DDR3 SDRAM core with 8n-prefetch architecture
• 1Gb density, organized as 128M x 8
• TSOP-66 package for easy PCB integration
• Operating voltage: 3.3V (VDD) – note: standard DDR3 typically uses 1.5V, so this specification should be verified for accuracy
• Parallel interface with differential data strobe (DQS)
• Operating temperature range: 0°C to 85°C (commercial grade)
• On-die termination (ODT) and programmable CAS latency (to be verified)

Applications

• Embedded systems
• Networking equipment
• Industrial computing
• Consumer electronics
• Memory modules (DIMM/SO-DIMM) as a component

Selection Guidance

When selecting the TSOP38G36DD1, verify the exact speed grade (e.g., -80, -1.25) and timing parameters from the official datasheet, as these are not listed here. Also confirm the voltage requirement, as 3.3V is atypical for DDR3; standard DDR3 operates at 1.5V, and DDR3L at 1.35V. Ensure compatibility with your memory controller and PCB layout for the TSOP-66 package.