Manufacturer: Infineon Technologies

Key Specifications

• Package: 62mm module
• Configuration: Dual N-Channel
• VDS: 1200V
• ID: 145A
• RDS(on): To be verified
• Mounting: Screw
• Technology: CoolSiC? (to be verified)
• Operating Temperature: To be verified

The FF6MR12W2M1HB11BPSA1 from Infineon Technologies is a robust dual N-channel MOSFET power module designed for high-voltage, high-current switching applications. Housed in a standard 62mm module package, this device delivers a drain-source voltage rating of 1200V and a continuous drain current of 145A, making it suitable for demanding industrial and energy systems.

Key Features

• Dual N-channel MOSFET configuration for flexible circuit design
• High blocking voltage (1200V) and high current capability (145A)
• Industry-standard 62mm module package with screw terminals for reliable mounting
• Optimized for low switching losses (specific values to be verified)
• Designed for ruggedness and long-term reliability in harsh environments

Applications

• Motor drives and inverters
• Uninterruptible power supplies (UPS)
• Renewable energy systems (solar, wind)
• Industrial power conversion
• Welding equipment

Selection Guidance

When integrating the FF6MR12W2M1HB11BPSA1 into your design, consider the thermal management requirements due to the high current rating. Ensure proper heatsinking and gate drive circuitry to achieve optimal performance. For detailed electrical characteristics, thermal data, and application notes, refer to the official Infineon datasheet. Some parameters, such as on-resistance and operating temperature range, are to be verified from the latest documentation.