Manufacturer: Infineon Technologies
Key Specifications
- Package: TO-247-3
- Configuration: Trench Field-Stop IGBT with anti-parallel diode
- Collector-Emitter Voltage (V_CE): 650 V
- Continuous Collector Current (I_C @ T_c=100°C): 40 A
- Power Dissipation (P_tot): 255 W
- Operating Temperature: -40 to 175 °C
- Switching Type: High-speed
The IKW40N65H5 is a 650V, 40A Trench Field-Stop IGBT from Infineon's HighSpeed 5 family, housed in a TO-247-3 package. It integrates an anti-parallel diode, providing a compact solution for power switching applications that demand high efficiency and reliability.
Key Features
- Collector-emitter voltage (V_CE): 650 V
- Continuous collector current (I_C) at T_c=100°C: 40 A
- Low saturation voltage (V_CE(sat)): typical value to be verified
- Integrated fast anti-parallel diode
- High-speed switching performance optimized for hard-switching topologies
- Maximum junction temperature: 175 °C
- TO-247-3 package with industry-standard footprint
Applications
- Uninterruptible power supplies (UPS)
- Solar inverters
- Welding equipment
- Industrial motor drives
- Power factor correction (PFC) circuits
Selection Guidance
When selecting the IKW40N65H5, consider the operating voltage, current, and switching frequency of your application. The device is designed for high-speed switching and low conduction losses, making it suitable for hard-switching topologies. For detailed thermal and electrical characteristics, refer to the official datasheet. Ensure proper heat sinking and gate drive design to fully utilize the device's capabilities.
