Manufacturer: Winbond Electronics

Key Specifications

• Package: 54-pin TSOP
• Core: CMOS
• Memory Size: 4Gb (512M x 8)
• Interface: Parallel
• Voltage: 3.3V
• Temperature: To be verified
• Speed Grade: To be verified

The W634GU8QB11I is a high-speed CMOS synchronous dynamic random access memory (SDRAM) manufactured by Winbond Electronics. It is organized as 512M words by 8 bits, providing a total density of 4 gigabits. This device operates with a 3.3V power supply and is housed in a standard 54-pin TSOP package, making it suitable for a wide range of memory-intensive applications.

Key Features

• High-speed CMOS SDRAM with synchronous interface
• Memory organization: 512M x 8 (4Gb density)
• Supply voltage: 3.3V (typical)
• Package: 54-pin TSOP (Thin Small Outline Package)
• Parallel interface for straightforward integration
• Compliant with JEDEC SDRAM standards (details to be verified)
• Operating temperature range: to be verified
• Speed grade and timing parameters: to be verified

Applications

This SDRAM is commonly used in computing systems, networking equipment, telecommunications, and industrial control systems where reliable, high-bandwidth memory is required. It is also suitable for embedded applications that demand cost-effective memory solutions.

Selection Guidance

When selecting this component, verify the specific speed grade, temperature range, and timing characteristics against your system requirements, as these may vary by part number suffix. Consult the official Winbond datasheet for detailed electrical specifications and AC timing diagrams.