Manufacturer: PANJIT International

Key Specifications

• Package: SOT-23
• Type: NPN BJT
• Collector-Emitter Voltage (VCEO): 40V
• Collector Current (IC): 200mA
• DC Current Gain (hFE): 100-300 (typical)
• Transition Frequency (fT): 300MHz
• Operating Temperature: -55°C to +150°C
• Mounting: Surface Mount

The MMBT3904FN3 from PANJIT International is a general-purpose NPN bipolar junction transistor (BJT) housed in a compact SOT-23 surface-mount package. This device is designed for low-power switching and amplification circuits, offering a balanced combination of voltage and current handling capabilities suitable for a wide range of electronic applications.

Key Features

• NPN silicon epitaxial planar transistor
• Collector-emitter voltage (VCEO): 40V (to be verified for exact rating)
• Collector current (IC): up to 200mA (to be verified)
• High DC current gain (hFE) range: typically 100-300
• Transition frequency (fT): 300MHz (typical)
• Small SOT-23 package for space-constrained PCB designs
• Operating temperature range: -55°C to +150°C
• RoHS compliant and lead-free

Applications

• General-purpose switching circuits
• Signal amplification in audio and sensor interfaces
• Driver stages for relays, LEDs, and small loads
• Logic level shifting and interface circuits
• Oscillator and timing circuits

Selection Guidance

When selecting the MMBT3904FN3 for your design, consider the operating voltage and current requirements of your application. Ensure that the collector-emitter voltage and collector current do not exceed the device's absolute maximum ratings. For high-frequency applications, verify the transition frequency meets your needs. The SOT-23 package is suitable for automated assembly and is ideal for compact designs. For detailed electrical characteristics and thermal data, refer to the official datasheet provided by PANJIT International.