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K4A8G165WC-BCTD - Samsung DDR4 SDRAM, 8Gb density, x16 organization, 1.35V/1.5V, FBGA package, for computing and
K4A8G165WC-BCTD - Samsung DDR4 SDRAM, 8Gb density, x16 organization, 1.35V/1.5V, FBGA package, for computing and
K4B4G1646E-BCNB - Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM in 96-ball FBGA package, organized as 256M x 16
K4B4G1646E-BCNB - Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM in 96-ball FBGA package, organized as 256M x 16
MT40A512M16TB-062E:R - Micron MT40A512M16TB-062E:R is a 8Gb DDR4 SDRAM in 96-ball FBGA package, organized as 512M x 16
MT40A512M16TB-062E:R - Micron MT40A512M16TB-062E:R is a 8Gb DDR4 SDRAM in 96-ball FBGA package, organized as 512M x 16
NT5CC256M16ER-EK - Nanya NT5CC256M16ER-EK is a 4Gb DDR3L SDRAM in 96-ball FBGA, x16 organization, 1.35V, for computing
NT5CC256M16ER-EK - Nanya NT5CC256M16ER-EK is a 4Gb DDR3L SDRAM in 96-ball FBGA, x16 organization, 1.35V, for computing
MT41K128M16JT-125:K - Micron MT41K128M16JT-125:K is a 2Gb DDR3L SDRAM in 96-ball FBGA, organized as 128M x 16
MT41K128M16JT-125:K - Micron MT41K128M16JT-125:K is a 2Gb DDR3L SDRAM in 96-ball FBGA, organized as 128M x 16
TPS51200DRCR - DDR termination regulator, 2A sink/source, adjustable output, 10VSON package, for DDR2/DDR3/DDR4 bus
TPS51200DRCR - DDR termination regulator, 2A sink/source, adjustable output, 10VSON package, for DDR2/DDR3/DDR4 bus
MT41K256M16TW-107 IT:P - Micron MT41K256M16TW-107 IT:P is a 4Gb DDR3L SDRAM in 96-ball FBGA, organized as 256M x 16
MT41K256M16TW-107 IT:P - Micron MT41K256M16TW-107 IT:P is a 4Gb DDR3L SDRAM in 96-ball FBGA, organized as 256M x 16
MT41K256M16TW-107:P - Micron MT41K256M16TW-107:P is a 4Gb DDR3L SDRAM in 96-ball FBGA package, organized as 256M x 16
MT41K256M16TW-107:P - Micron MT41K256M16TW-107:P is a 4Gb DDR3L SDRAM in 96-ball FBGA package, organized as 256M x 16