Manufacturer: Leshan Radio Company

Key Specifications

• Package: SOT-23
• Type: NPN Bipolar Transistor
• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 160-400 (at IC=1mA, VCE=5V)
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 225mW

The LBC817-25LT1G from Leshan Radio Company is a general-purpose NPN bipolar junction transistor housed in a compact SOT-23 surface-mount package. Designed for low-power amplification and switching applications, this device offers a collector-emitter voltage rating of 50V and a continuous collector current of 100mA, making it suitable for a wide range of consumer and industrial electronic circuits.

Key Features

• NPN silicon epitaxial planar transistor
• Collector-emitter voltage (VCEO): 50V
• Collector current (IC): up to 100mA
• DC current gain (hFE) group 25: 160 to 400 at IC=1mA, VCE=5V
• Low saturation voltage: typically 0.1V (IC=10mA, IB=1mA) – to be verified
• Operating junction temperature range: -55°C to +150°C
• Power dissipation: 225mW (at 25°C ambient)
• Available in SOT-23 package, suitable for automated assembly

Applications

• Signal amplification in audio and sensor interfaces
• Switching circuits for relays and LEDs
• Driver stages in battery-powered devices
• General-purpose logic level shifting

Selection Guidance

When selecting the LBC817-25LT1G, consider the operating voltage, current, and power dissipation limits. The hFE grouping (25) indicates a medium gain range, which is suitable for applications requiring consistent gain performance. For high-frequency or high-current applications, please consult the datasheet for detailed characteristics and thermal derating curves. Always verify the device's absolute maximum ratings against your circuit conditions.