Manufacturer: Littelfuse (IXYS)

Key Specifications

• Package: D2PAK (TO-263)
• Polarity: P-Channel
• VDS: -200V
• ID: -26A
• RDS(on): 0.135Ω (typ)
• VGS(th): -4.5V (max)
• Operating Temperature: -55°C to +150°C

The IXTA26P20P is a P-Channel enhancement-mode Power MOSFET from Littelfuse (IXYS), housed in a D2PAK (TO-263) package. This device is designed for applications requiring high-voltage switching with low on-resistance and fast switching performance. With a drain-source voltage rating of -200V and a continuous drain current of -26A, it provides a robust solution for power management in industrial and automotive environments.

Key Features

• P-Channel polarity for ease of high-side drive
• Low on-resistance (RDS(on)) of 0.135Ω (typical) to minimize conduction losses
• Fast switching characteristics for improved efficiency
• Wide operating temperature range from -55°C to +150°C
• RoHS compliant and halogen-free
• D2PAK package suitable for surface-mount assembly

Applications

• DC-DC converters
• Motor control circuits
• Power supply units
• Battery protection and management systems
• Load switching

Selection Guidance

When selecting the IXTA26P20P, ensure that the voltage and current ratings meet your circuit requirements. The device is intended for high-side switching due to its P-Channel configuration. For detailed thermal and electrical characteristics, refer to the official datasheet. Some parameters such as gate charge and switching times are to be verified based on specific operating conditions.